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    • 专利摘要:
    Device for measuring an electric field (E), the device comprising a micromechanical structure (1) of a material which is electrically conductive at an operating temperature, the micromechanical structure (1) comprising a frame section (2) and a movable section (3) the movable section (3) is electrically conductively and mechanically elastically connected to the frame section (2) and is movable relative to the frame section (2), wherein the micromechanical structure (1) is designed so that in an arrangement of the micromechanical structure (1) in the electric field (E) with a first field strength component (Ex) parallel to a first direction (x) not equal zero electrical polarization of the micromechanical structure (1) takes place, the one on the movable portion (3) acting first force component (Fx) in parallel to the first direction (x) and one of the first force component (Fx) dependent change in the spatial arrangement of the beweglic hen section (3) relative to the frame section (2) result, and wherein detection means (9,11,15,16) are provided to determine this change.
    公开号:AT520811A1
    申请号:T51052/2017
    申请日:2017-12-20
    公开日:2019-07-15
    发明作者:Wilfried Hortschitz Dr；Harald Steiner Dr；Michael Stifter Dr
    申请人:Donau Univ Krems；
    IPC主号:
    专利说明:

    Austrian
    Patent office (io) AT 520811 A1 2019-07-15 (12) Austrian patent application
    (21) Application number: A 51052/2017 (22) filing: 12/20/2017 (43) Published on: 07/15/2019
    (51) Int. CI .: B81B7 / 02 (2006.01)
    G01R 29/12 (2006.01)
    AT 520811 A1 2019-07-15
    (56) Citations: (71) Patent applicants: DE 102008052477 A1 Danube University Krems DE 102012222973 A1DE 102009029202 A1 3500 Krems (AT) (72) Inventor:Hortschitz Wilfried Dr.7033 Pöttsching (AT)Steiner Harald Dr.2620 Flatz (AT)Founder Michael Dr.2620 Neunkirchen (AT) (74) representative:Kliment & Henhapel Patentanwälte OG1010 Vienna (AT)
    (54) DEVICE FOR MEASURING AN ELECTRICAL FIELD (57) Device for measuring an electric field (E), the device comprising a micromechanical structure (1) made of a material that is electrically conductive at an operating temperature, the micromechanical structure (1) comprising a frame section ( 2) and has a movable section (3), the movable section (3) being electrically conductively and mechanically elastically connected to the frame section (2) and being movable relative to the frame section (2), the micromechanical structure (1) being designed in this way is that when the micromechanical structure (1) is arranged in the electric field (E) with a first field strength component (E x ) parallel to a first direction (x) not equal to zero, an electrical polarization of the micromechanical structure (1) takes place, which the first force component (F x ) acting parallel to the first direction (x) and one of the first force component ( F x ) dependent change in the spatial arrangement of the movable section (3) relative to the frame section (2), and wherein detection means (9,11,15,16) are provided to determine this change.
    y
    L 1 - © Z
    Fig. 1
    SUMMARY
    Device for measuring an electric field (E), the device comprising a micromechanical structure (1) made of a material that is electrically conductive at an operating temperature, the micromechanical structure (1) having a frame section (2) and a movable section (3), wherein the movable section (3) is electrically conductively and mechanically elastically connected to the frame section (2) and is movable relative to the frame section (2), the micromechanical structure (1) being designed such that when the micromechanical structure (1) is arranged In the electric field (E) with a first field strength component (Ex) parallel to a first direction (x) not equal to zero, an electrical polarization of the micromechanical structure (1) takes place, which is parallel to a first force component (Fx) acting on the movable section (3) to the first direction (x) as well as a change in the spatial arrangement of the moveable depending on the first force component (Fx) hen section (3) relative to the frame section (2), and wherein detection means (9,11,15,16) are provided to determine this change.
    (Fig. 1) / 43
    Slm / 49279
    DEVICE FOR MEASURING AN ELECTRICAL FIELD
    FIELD OF THE INVENTION
    The present invention relates to a device for measuring an electric field, in particular a static or quasi-static electric field.
    STATE OF THE ART
    The measurement of electrical fields, in particular static or relatively slowly varying electrical fields, plays a role in a wide variety of areas. For example, the determination of electrical fields at workplaces in electrostatically protected areas such as be important in the manufacture and packaging of electronic components where surface charges must be avoided. A completely different example is the measurement of electric fields in the earth's atmosphere, which provides important information for meteorology, since changes in these electric fields due to weather phenomena such as Thunderstorms, cold / warm fronts or rain clouds are caused. In particular, lightning research should also be mentioned, for which the monitoring of electrostatic fields in the atmosphere is of eminent importance, for example in order to be able to predict the occurrence of lightning.
    / 43
    From the prior art, in particular, electric field meters are known for measuring electric fields, in which an electrically conductive sensor electrode is periodically released and covered again by means of a rotating impeller, so that the sensor electrode can be charged and discharged alternately due to the influence of the external electric field. see e.g. THERE. Hill and M. Kanda, The measurement, Instrumentation, and sensors handbook XXV, section 47,
    Electric Field Strength (CRC Press LLC and IEEE Press, 1999). Because of the impeller, electric field meters are often referred to as field mills. A disadvantage of these field mills is that they usually have to be dimensioned relatively large and are accordingly bulky. Apart from that, even with relatively small field mills, individual parts of the respective field mill, in particular the sensor electrode, are usually grounded, which inevitably distorts the electrical fields to be measured.
    In contrast, electro-optical sensors known from the prior art for measuring electrical fields do not require grounding and are superior to field mills with regard to possible distortions of the electrical field to be measured, see e.g. N.J. Vasa et al., Journal of Materials Processing Technology 185 (1-3), 173 (April 2007). For example, the electric field strength can be determined by means of light absorption or changes in the
    Refractive index can be determined. However, the known electro-optical sensors have a strong intrinsic temperature instability, which is due to the pyroelectric effect in connection with the thermal expansion of the respective sensor material.
    / 43
    OBJECT OF THE INVENTION
    It is therefore the object of the present invention, a
    To provide a device for measuring an electric field, in particular a static or slowly varying electric field, which avoids the disadvantages mentioned above. In particular, the device according to the invention should not distort the electric field to be measured and the device according to the invention should be miniaturizable and temperature insensitive or temperature stable.
    PRESENTATION OF THE INVENTION
    To achieve the stated object, a device for measuring an electrical field is provided according to the invention, the device comprising a micromechanical structure which extends in a first direction, a second direction and a third direction, the first direction, the second direction and the third The directions are mutually normal, with the micromechanical structure consisting of one
    Operating temperature is electrically conductive material and has a frame portion and a movable portion, the movable portion with the
    The frame section is electrically conductively and mechanically elastically connected and is movable relative to the frame section, the micromechanical structure being designed such that when the micromechanical structure is arranged in the electric field with a first field strength component parallel to the first direction other than zero, the micromechanical structure is electrically polarized , the first force component acting on the movable section parallel to the first direction and a change in the spatial arrangement of the movable / 43
    Section relative to the frame portion, and wherein detection means are provided to change the spatial arrangement of the movable portion relative to
    Determine frame section.
    With this device, in particular static electrical fields (ie with frequency 0 Hz) or quasi-static electrical fields (frequency typically in the range of 100 Hz or lower) can be determined, the maximum frequency of the still detectable electrical fields due to the mechanical properties of the micromechanical structure , in particular by their natural or resonant frequencies.
    Distortion of the electric field to be measured is practically excluded by the device according to the invention, in particular since the device according to the invention can be built extremely compact (due to the small dimensions, the electric field is practically not distorted) and since no grounding is necessary.
    The thermal dependency of the mechanical properties of the micromechanical structure is well-defined and known, so that, on the one hand, there is a systematic, well-defined temperature dependency, so that this can easily be taken into account by calculation. On the other hand, the temperature dependence can also be greatly reduced by a suitable choice of material and an optimized geometry, which is why the device according to the invention can be described as temperature-insensitive or temperature-stable, in particular in comparison with the known prior art.
    The micromechanical structure could also be referred to as a sensor that is read out with the detection means.
    / 43
    The dimensions of the micromechanical are typically
    Structure in the first and second direction in the range of
    0.1 mm to 5 mm, preferably from 0.1 mm to 1 mm, and typically in the third direction by at least one
    Order of magnitude less. Typically, the above-mentioned maximum frequency of still detectable electric fields is then in the range of 10 kHz. In the context of the present application, however, the term “micromechanical structure” is to be understood in such a way that dimensions in the sub-micrometer range are also theoretically possible, in particular in the third direction. The device according to the invention can thus not only be greatly miniaturized, but said maximum frequency can also be increased significantly above the 10 kHz mentioned.
    The operating temperature refers to the temperature at which the device is typically used. The operating temperature is usually significantly higher than the absolute zero point, so that semiconductor materials are typically also suitable for the micromechanical structure, since these are sufficiently conductive at the operating temperature. The latter means that at the operating temperature the micromechanical structure can be polarized very quickly by electrical influence, since the charge carriers can migrate in the material of the micromechanical structure.
    The electrically conductive connection between the
    The frame section and the movable section ensures that the micromechanical structure as a whole is actually polarized and not the frame section and the movable section separately.
    The mechanically elastic connection between the
    The frame section and the movable section ensures that the movable section can move in relation to the frame section in the presence of an electric field and re-assumes its original spatial arrangement relative to the frame section when the electrical field is no longer present. That the mechanically elastic connection is synonymous with a connection by means of spring elements or resilient elements. Such connections are known per se. They can be realized in particular by a suitable choice of material for the connection between the movable section and the frame section.
    The movable section is preferably movable at least parallel to the first direction. In this case, an electric field in the first direction or the first non-zero field strength component can cause a first force component and consequently a deflection or change in the arrangement of the movable section relative to the frame section parallel to the first direction. The deflection or size of the change in arrangement, which is determined by means of the detection means, is then correspondingly a measure of the electrical field strength in the first direction or of the first field strength component.
    Of course, a control unit can also be provided in the device according to the invention in order to immediately “convert” between the specific change in arrangement and the size of the electric field in the first direction or the first field strength component.
    A complete spatial resolution, i.e. in all three spatial directions of an arbitrarily oriented electrical field can be realized accordingly, e.g. by three devices according to the invention can be combined as follows: the movable section of the first device can only be moved specifically in the first direction, the movable section of the second device can only be moved in the second direction and the movable section of the third / 43
    Device only in the third direction. “Only” is to be understood in such a way that movements of the respective movable section in the other two directions cannot be ruled out in principle, but can be at least an order of magnitude smaller if there is an equally large field strength component in these directions. In other words, the mechanically elastic connection is such that, at least approximately in one of the three directions, there is a spring constant that is at least one order of magnitude smaller than the spring constant in the remaining two directions.
    In the simplest case, three identical devices are simply combined in such a way that the first device is oriented along the first direction, the second device along the second direction and the third device along the third direction.
    Analogously to what has been said above, a control unit can be provided which immediately converts the arrangement changes determined for all three directions into the size of the electric field in all three directions or into the size of the first field strength component, a second field strength component and a third field strength component.
    In order to be able to produce the micromechanical structure, in particular with the resilient elements between the movable section and the frame section, in a well-defined manner with the desired mechanical properties, the frame section and the movable section, in particular the entire micromechanical structure, can be formed in one piece. The frame section and the movable section, in particular the entire micromechanical structure, can be made from, preferably single-crystal, silicon. This enables, for example, production based on a silicon wafer or silicon-on-insulator (SOI) wafer in a manner known per se. This also enables inexpensive production in large numbers.
    In order to ensure a simple construction, it is provided in a preferred embodiment of the device according to the invention that the frame section essentially forms a U-shape at least in sections in a plane that is parallel to the first direction and the second direction, with parallel legs of the U-shape run parallel to the first direction, that the movable section is arranged between the legs and that the movable section is connected to the legs via webs, which preferably run parallel to the second direction.
    The webs can run in a U-shaped or meandering manner in the plane in order to avoid mechanical non-linearities in the event of larger deflections / changes in arrangement.
    In particular, with this structure, a specific sensitivity of the device according to the invention in the first direction can be achieved in that the movable section can be moved mechanically more easily and possibly also further in the first direction than in the other two directions. In this case, the webs ensure a spring constant in the first direction that is at least one order of magnitude smaller than corresponding spring constants in the other two directions.
    As already mentioned above, three of the same devices of this type can be combined in order to enable the electrical field to be measured to be spatially completely resolved.
    In order to increase the sensitivity or the resolving power, it is provided in a preferred embodiment of the device according to the invention that the micromechanical structure comprises a reinforcing element / 43 which is electrically separate from the frame section and from the movable section and which, viewed in the first direction, is arranged behind the movable section is, wherein a gap is arranged between the movable portion and the reinforcing member. The reinforcing element is also polarized without the charge carriers from
    Reinforcing element could flow to the frame section or even movable section. The movable section therefore has an exactly opposite polarization in the region of the gap as the reinforcing element in the region of the gap. Accordingly, the movable section is increasingly pulled towards the reinforcing element or causes this
    Reinforcing element a reinforcement of the first
    Force component, in particular in that spatial area where the gap has a particularly small gap width, the latter being measured in the first direction.
    In order to optimize the gain, it is provided in a particularly preferred embodiment of the device according to the invention that the gap has a gap width measured in the first direction of less than or equal to 500 gm, preferably less than or equal to 200 gm, particularly preferably from 0.1 gm to 50 gm, having. The latter also ensures uncomplicated production. For comparison: the deflections / changes in arrangement to be detected, which are caused by an electric field, are typically less than 1 gm.
    In principle, a resolution in the range from 1 (V / m) / (Hz) 0.5 to 50 (V / m) / (Hz) 0.5 can be achieved in this way.
    A wide variety of detection means are theoretically conceivable, for example capacitive or acoustic. In order to rule out a distortion of the electrical field to be measured by the detection of the change in arrangement or by the detection means and at the same time to ensure the greatest possible accuracy of the detection, it is provided in a particularly preferred embodiment of the device according to the invention that the detection means include an optical sensor and at least comprise a light supply means to enable purely optical detection.
    In theory, it would be conceivable to image the movable section "directly" with the optical sensor, provided that it is large enough or the sensor resolves locally fine enough.
    Suitable optical sensors are known per se. For example, an optical sensor based on at least one photodiode or at least one phototransistor would be conceivable. In this case, the at least one photodiode / the at least one phototransistor can be illuminated “directly” in that it is arranged in spatial proximity to the movable section, in particular directly below the movable section, and directly captures the light coming from the area of the movable section. Or the at least one photodiode / the at least one phototransistor is “indirectly” illuminated by the optical sensor at least one
    Light guide means, in particular at least one fiber optic cable, comprises in order to feed the light from the area of the movable section, in particular from the area directly below the movable section, to the at least one photodiode / the at least one phototransistor.
    The at least one light supply means is provided in order to ensure a defined illumination of the movable section. The at least one light supply means can e.g. comprise one or more light guides and / or at least one light source, in particular one or more light emitting diodes.
    The micromechanical structure does not necessarily have to be arranged between the at least one light supply means and the optical sensor. Theoretically it would be e.g. a measurement in reflection geometry is also conceivable, in which the at least one light supply means and the optical sensor are arranged on the same side in relation to the micromechanical structure.
    In a particularly preferred embodiment of the device according to the invention, it is provided that the movable section is arranged between the at least one light supply means and the optical sensor.
    This represents a structurally particularly simple embodiment and makes it possible to use a change in light modulation and / or a change in transmission to determine the deflection / change in arrangement of the movable section.
    A particularly simple and compact design results from the fact that the movable section is arranged between at least one light-emitting diode and at least one photodiode or at least one phototransistor. However, since these elements have to be supplied with current, there can be situations where the operation of these elements near the movable section influences the weak electric field to be measured too strongly and falsifies the measurement result too much. It is therefore provided in a particularly preferred embodiment of the device according to the invention that the at least one light supply means comprises a light guide in order to illuminate one side of the micromechanical structure at least in sections with light guided through the light guide and that the optical sensor comprises a further light guide in order to to catch the light on an opposite side of the micromechanical structure.
    In order to achieve particularly high accuracy in the detection of the deflection / change in arrangement of the movable section, it is provided in a preferred embodiment of the device according to the invention that the
    Detection means comprise a diaphragm structure on the movable section / 43 and a fixed diaphragm structure, the fixed diaphragm structure having a spatial arrangement that is fixed relative to the frame section. Due to the fixed diaphragm structure, which is arranged above or below the diaphragm structure on the movable section, incident light is spatially modulated before it falls on the movable section. In principle, the spatially resolved measured light modulation or its change can be evaluated to determine the deflection / change in arrangement of the movable section.
    By choosing and arranging the diaphragm structure on the movable section corresponding to the fixed diaphragm structure, this diaphragm structure moves with the movable one
    Section with and can be minor
    Deflections / changes in arrangement of the movable section result in large changes in the transmitted light intensity. In other words, it can
    Deflection / change of arrangement can be achieved with high precision and at the same time inexpensively by simply measuring the transmitted light intensity, for which purpose e.g. a simple, non-spatially resolving photodiode / phototransistor is sufficient.
    In order to be able to manufacture the fixed diaphragm structure in a particularly simple manner in terms of production technology, it is provided in a preferred embodiment of the device according to the invention that the fixed diaphragm structure is formed in a metal layer on a glass wafer. That the metal layer forms the fixed panel structure on the glass wafer, which is arranged above the movable section and spatially fixed to the frame section. For example, the glass wafer can be mechanically rigidly connected to the frame section.
    A coordination of the fixed aperture structure to the
    Panel structure on the movable section can thus be made very easily in terms of production technology.
    / 43
    For example, the aperture structure can be moved
    Section consist of a plurality of rectangular holes, which are arranged one behind the other along the first direction, each hole having a smaller extent along the first direction than along the second direction. The corresponding fixed aperture structure can then e.g. also consist of equally large and equally arranged rectangular holes in the metal layer. Or the corresponding fixed aperture structure is e.g. made of rectangular metal strips, which are the same size as the rectangular holes and are arranged in the same way so that, with a certain deflection of the movable section, they are congruent with the holes of the diaphragm structure on the movable section and practically no light is transmitted. With other deflections, however, light is transmitted in different intensities through the fixed diaphragm structure and the diaphragm structure at the movable section.
    A suitable metal would be e.g. Cr, which can be applied to the glass wafer by means of photolithography and physical vapor deposition ("physical vapor deposition").
    According to what has been said above, it is provided in a particularly preferred embodiment of the device according to the invention that the fixed diaphragm structure between the movable section, in particular the diaphragm structure on the movable section, and the at least one
    Light supply means or the optical sensor is arranged. This enables a very compact design of the device according to the invention.
    If the device according to the invention is mechanical
    Exposed to vibrations, there is a risk that there will be a deflection / change in arrangement of the movable portion / 43 which is not due to the presence of an electric field. Respectively. there is then a risk that the measurement result regarding an existing electric field will be falsified accordingly. Around
    In a preferred embodiment of the device according to the invention, it is provided that the micromechanical structure is designed in such a way that it is possible to separate or differentiate deflections / arrangement changes of the movable section which are caused by vibrations from those which are caused by electrical fields the change in the spatial arrangement of the movable section relative to the frame section comprises a rotation of the movable section relative to the frame section, preferably about an axis of rotation parallel to the third direction. This takes into account the fact that vibrations usually only have a translatory effect and accordingly only result in linear deflections / changes in the arrangement of the movable section. By specifically determining the rotary portion of the deflections / changes in arrangement, the electric field can be inferred directly.
    The corresponding design can take place by a suitable, in particular asymmetrical, mechanically elastic connection of the movable section to the frame section.
    Furthermore, the rotary effect of the electric field can be enhanced by a targeted geometric configuration of the reinforcing element.
    As an alternative or in addition to this, in a preferred embodiment of the device according to the invention, in order to distinguish deflections / changes in the arrangement of the movable section caused by vibrations from those caused by electric fields, the micromechanical structure provides a further / 43 movable one Includes section which is electrically conductively and mechanically elastically connected to the frame section, wherein the strength of the mechanical coupling of the further movable section to the frame section in a certain known ratio, preferably in a ratio of 1: 1, to the strength of the mechanical coupling of the movable section the frame section stands, and wherein the micromechanical structure is designed such that when the micromechanical structure is arranged in the electric field with the first field strength component not equal to zero, the electric polarization of the micromecha African structure takes place, which has a further first force component acting on the further movable section parallel to the first direction and a change in the spatial arrangement of the further movable section relative to the frame section dependent on the further first force component, the further first force component and / or the change in the spatial arrangement of the further movable section is less than or equal to 0.1, preferably less than or equal to 0.01, smaller than the first force component and / or the change in the spatial arrangement of the movable section caused by the first force component, and that further detection means are provided to determine the change in the spatial arrangement of the further movable section relative to the frame section.
    The vibrations act equally on the movable section and the further movable section. However, the electric field affects the movable section more than the further movable section by at least an order of magnitude. By subtracting from the deflection / arrangement change of the movable section that of the further movable section - if necessary using an appropriate proportionality factor that takes into account the ratio of the mechanical couplings - / 43 one essentially obtains that deflection / arrangement change of the movable section that mainly due to the electric field.
    In terms of production technology, this embodiment variant can be easily realized by reproducing the further movable section and its connection to the frame section exactly the same as the movable section and its connection to the frame section. The proportionality factor can therefore be assumed to be exactly 1 in accordance with the 1: 1 ratio of the mechanical couplings. If the other movable section is spatially central in the
    The frame section is arranged and the movable section at the edge of the frame section inevitably acts on the movable section a greater force component caused by the electrical polarization than on the further movable section. This difference can also be clearly reinforced by arranging the reinforcing element in the immediate vicinity of the movable section (separated from it only by the gap).
    The detection of the deflection / change in arrangement of the further movable section can be carried out in exactly the same way as for the movable section, so that a detailed description is dispensed with here and reference can instead be made to the corresponding detailed explanations given above in connection with the movable section. That what has been said about the detection means applies analogously to the other detection means. Accordingly, in a particularly preferred embodiment of the device according to the invention, it is provided that the further detection means comprise a further diaphragm structure on the further movable section and a further fixed diaphragm structure, the further fixed diaphragm structure having a spatial arrangement that is fixed relative to the frame section. The further diaphragm structure is thus moved along with the further / 43 movable section. The other fixed
    Diaphragm structure can be specially matched to the further diaphragm structure in order to enable a high degree of accuracy in determining the deflection / change in arrangement of the further movable section, in particular by simple light transmission measurements. The further fixed diaphragm structure is therefore preferably arranged above the further diaphragm structure.
    It is also provided in a particularly preferred embodiment of the device according to the invention that the further detection means comprise a further optical sensor and at least one further light supply means. Again, what has been said above regarding the at least one light supply means and the optical sensor applies analogously.
    Furthermore, in a particularly preferred embodiment of the device according to the invention, it is provided that the further optical sensor is formed by the optical sensor and the at least one further light supply means by the at least one light supply means, the further movable section between the at least one
    Light supply means and the optical sensor is arranged. In particular, the further movable section can thus be illuminated with the same light-emitting diode as the movable section. The optical sensor in turn only requires a rough local resolution, in a manner of speaking two large pixels, in order to be able to distinguish between the light intensity transmitted through the movable section and the light intensity transmitted through the further movable section.
    The further fixed diaphragm structure can be realized particularly easily by producing or arranging it together with the fixed diaphragm structure on the glass wafer. Accordingly, in a particularly preferred embodiment of the device according to the invention, it is provided that the further fixed diaphragm structure is formed in the metal layer on the glass wafer. That the further fixed panel structure is also formed by the metal layer. The glass wafer is also arranged above the further movable section and spatially fixed to the frame section.
    The field of application of the device according to the invention is varied. In particular, a vehicle, preferably an aircraft, particularly preferably an unmanned aircraft comprising a device according to the invention is provided according to the invention. For example, the vehicle can be a drone, in particular a flight drone. However, the device according to the invention can also be useful in all other types of vehicles, in order to give a person or computer controlling the vehicle information about the electric field surrounding the vehicle, so that the
    Man / computer can control the vehicle depending on it. This makes it possible, for example, not to get too close to an excessive electric field (e.g. caused by a power line) with the vehicle and thus avoid damaging the vehicle. For example, a drone can detect a 220 kV power line (frequency of the alternating current: 50 Hz) at approx. 70 m distance without contact and maintain a corresponding safety distance.
    BRIEF DESCRIPTION OF THE FIGURES
    The invention will now be explained in more detail on the basis of exemplary embodiments. The drawings are exemplary and are intended to illustrate the inventive concept, but in no way to narrow it down or even reproduce it conclusively.
    / 43
    It shows:
    Fig. 1 shows a micromechanical structure of a first
    Embodiment of the device according to the invention in
    At sight
    Fig. 2 shows the micromechanical structure of a second
    Embodiment of the device according to the invention in supervision, wherein a reinforcing element is provided compared to the first embodiment
    3 shows an axonometric view of the micromechanical structure from FIG. 2
    FIG. 4 shows a representation analogous to FIG. 3, a glass wafer having a structured metal layer applied to its underside being arranged above the micromechanical structure
    Fig. 5 is an illustration analogous to Fig. 4, wherein from
    For reasons of clarity, the glass wafer is hidden and only the metal layer is shown
    6 shows the micromechanical structure of the second
    Embodiment of the device according to the invention with a glass wafer arranged above it in a side view
    Fig. 7 is a sectional view taken along section line A-A in Fig. 4, wherein the viewing direction is a second direction
    FIG. 8 shows a representation analogous to FIG. 6, with an additional light-emitting diode arranged above the glass wafer and a photodiode arranged below the micromechanical structure
    9 shows the micromechanical structure of a third
    Embodiment of the device according to the invention in / 43
    Top view, a further movable section is provided compared to the second embodiment
    10 shows the micromechanical structure of a fourth
    Embodiment of the device according to the invention in supervision, wherein an electric field causes the movable section to rotate
    FIG. 11 shows the micromechanical structure from FIG. 10 in a representation analogous to FIG. 5, in which the metal layer applied to the underside of the glass wafer is shown, but not the glass wafer itself for reasons of clarity
    WAYS OF CARRYING OUT THE INVENTION
    1 shows a micromechanical structure 1 of a first embodiment of the inventive device for measuring an electric field E. The micromechanical structure 1 extends in a first direction x, a second direction y and a third direction z, the first direction x, the the second direction y and the third direction z are mutually normal. 1, the micromechanical structure 1 is shown in a plane xy, which is parallel to the directions x, y, in which plane xy the micromechanical structure 1 has dimensions that typically range from 0.1 mm to 5 mm, preferably from 0.1 mm to 1 mm, and one
    Magnitude are larger than in the third direction z.
    In all of the examples shown in FIGS. 1 to 11, the micromechanical structure 1 is made of Si and is preferably produced on the basis of a silicon-on-insulator (SOI) wafer known per se. That the micromechanical structure 1 consists of a material which is conductive at an operating temperature / 43 which is typically well above absolute zero. In particular, the Si can be doped appropriately to determine the conductivity for certain
    Targeted use cases or operating temperatures.
    In the exemplary embodiment in FIG. 1, the micromechanical structure 1 has a frame section 2 and a movable section 3, the movable section 3 being electrically conductively and mechanically elastically connected to the frame section 2 and being movable relative to the frame section 2. Specifically, the frame section 2 is U-shaped in the plane shown in FIG. 1, with two parallel legs 4 of the U-shape extending parallel to the first direction x. The movable section 3 is arranged between these legs 4 and connected to the legs 4 via webs 5 which run essentially parallel to the second direction y. The frame section 2 and the movable section 3 are made in one piece. In the example shown in FIG. 1, four webs 5 are provided, which are arranged in the region of the four corners of the movable section 3, the movable section in the plane xy essentially having a rectangular outline with a greater extension in the first direction x than in the second direction y. In the first direction x, the movable section 3 projects beyond the frame section 2.
    The design of the webs 5 allows the mechanical coupling of the movable section 3 to the frame section to be influenced in a targeted manner. The webs 5 can run in the plane xy in a U-shaped or meandering manner (not shown) in order to avoid mechanical non-linearities in the event of major deflections / changes in the arrangement of the movable section parallel to the first direction x.
    / 43
    The micromechanical structure 1 is designed such that when the micromechanical structure 1 is arranged in the electric field E with a first field strength component Ex parallel to the first direction x not equal to zero, the micromechanical structure 1 is electrically polarized, which in FIG. 1 is represented by “+” and is indicated on the micromechanical structure 1. In Fig. 1 only the first field strength component Ex is shown or the case is illustrated where field strength components are zero in the directions y, z.
    The polarization results in a force F acting on the movable section 3 with a first force component Fx parallel to the first direction x not equal to zero.
    Force components in the directions y, z are zero in the example shown.
    The first force component Fx results in a change (not shown) in the spatial arrangement of the movable section 3 relative to the frame section 2 depending on its size. In the example shown, this change would be a deflection of the movable section 3 along the first direction x, from Frame section 2 pointing away.
    The first force component Fx resulting from a specific first field strength component Ex can be enlarged or strengthened by means of a reinforcement element 6 of the micromechanical structure 1, as is shown in the micromechanical structure 1 of a second embodiment of the device according to the invention shown in FIGS. 2 and 3.
    The reinforcing element 6 is arranged behind the movable section 3 as seen in the first direction x. A gap 7 is in turn arranged between the movable section 3 and the reinforcing element 6. In the exemplary embodiment shown, the latter has a gap width 8, measured in the first direction x, in the range from 10 pm to 50 pm.
    / 43
    The reinforcing element 6 is also polarized by the electric field E or by the first field strength component Ex, which in turn is indicated in FIG. 2 by “+” and. The load carriers cannot flow from the reinforcing element 6 to the frame section 2 or even to the movable section 3. The movable section 3 therefore has an exactly opposite polarization in the area of the gap 7 as the reinforcing element 6 in the area of the gap 7. Accordingly, the movable section 3 is increasingly pulled toward the reinforcing element 6 or the reinforcing element 6 reinforces the first force component Fx.
    The deflection / change in arrangement of the movable section 3 can be determined with detection means and then the size of the first field strength component Ex can be concluded.
    In the exemplary embodiments shown, the deflection / change in arrangement of the movable section 3 is detected optically in order to avoid any distortion of the electric field E. In order to increase the measuring accuracy, the movable section 3 has a diaphragm structure 9 which consists of a series of rectangular holes 10, the sides of the rectangles running parallel to the directions x, y. The holes 10 are the same size and are arranged one behind the other in the first direction x. Each hole 10 has a substantially smaller dimension in the first direction x than in the second direction y.
    Theoretically, the modulation of a light falling along the third direction z onto the movable section 3 caused by the diaphragm structure 9 can be used to measure the deflection / change in arrangement of the movable section 3. In the exemplary embodiments shown, however, a fixed diaphragm structure 11, which is arranged above the movable section 3, is also provided, which points to the / 43
    Aperture structure 9 is matched. FIG. 5 shows the fixed screen structure 11 for the second exemplary embodiment of the device according to the invention, which consists of rectangular metal strips 14, which metal strips 14 correspond in number and size to the holes 10. In the exemplary embodiments shown, the fixed aperture structure 11 is formed by a metal layer 13 on an underside of a glass wafer 12 arranged above the micromechanical structure 1, cf. Fig. 4. The glass wafer 12 and thus the fixed aperture structure 11 are spatially fixed relative to the frame section 2.
    FIG. 6 shows a side view along the second direction y, from which the sequence of the movable section 3, metal layer 13 (and thus fixed aperture structure 11) and glass wafer 12 emerges along the third direction z.
    FIG. 7 shows a corresponding sectional view along the second direction y, the sectional plane going through the dashed line A-A in FIG. 4. The sectional view shows the diaphragm structure 9 with the holes 10 and the metal strips 14 of the fixed diaphragm structure 11 arranged above the holes 10.
    FIG. 8 shows a side view along the second direction y, a light-emitting diode 15 as a light-feeding means and a photodiode 16 as an optical sensor being shown as detection means. The resulting very compact design of the device according to the invention is immediately apparent.
    The light-emitting diode 15 serves to supply light along the third direction z to the fixed diaphragm 11 and the movable section 3 with the diaphragm structure 9 underneath. The photodiode 16 detects the intensity of the light transmitted through the aperture structures 9, 11. Due to the geometrical design or coordination of the aperture structures / 43
    9, 11, the smallest deflections / changes in arrangement of the movable section 3 result in clear, easily detectable changes in intensity, which allows inexpensive manufacture of the device according to the invention.
    9 shows the micromechanical structure 1 of a third embodiment of the device according to the invention. Here, a further movable section 17 is provided, which in principle is constructed in exactly the same way as the movable section 3 and how it is connected to the frame section 2 via (in the example shown four) webs 5, so that the further movable section 17 is movable relative to the frame section 2 , That the further movable section 17, like the movable section 3, is electrically connected to the frame section 2 and mechanically elastically coupled thereto, the ratio of the strength of the mechanical coupling being 1: 1. Consequently, vibrations of the micromechanical structure 1, which vibrations typically have an exclusively translatory effect, result in equally strong deflections / changes in arrangement of the movable section 3 and of the further movable section 17.
    In contrast to the movable section 3, however, the further movable section 17 is arranged in front of the movable section 3 as seen in the first direction x. In particular, the reinforcing element 6 is very far from the further movable section 17. The polarization of the micromechanical structure 1 resulting in the electric field E with the first field strength component Ex therefore results in a further first force component, which is at least one order of magnitude smaller and acts on the further movable section 17, compared to the first force component Fx, which acts on the movable section 3 works. In the exemplary embodiment shown, the further first force component is so small that it is not shown at all.
    / 43
    A deflection / change in arrangement of the further movable section 17 is therefore primarily caused by the vibrations. By determining this deflection and subtracting it from the determined / detected deflection of the movable section 3, a direct conclusion can be drawn about that part of the determined / detected deflection of the movable section 3 that relates to the electric field E or to the first field strength component Ex declining.
    For the determination / detection of the deflection / change in arrangement of the further movable section 17, further detection means are used, which can essentially be the same detection means as for the determination / detection of the deflection / change in arrangement of the movable section 3, which is why we do not refer here in detail to the further detection means is to be discussed, but reference is made to the above explanations regarding the detection means. However, it should be mentioned that, as is apparent from FIG. 9, the further movable section 17 has a further diaphragm structure 18, which in the example shown is constructed exactly the same as the diaphragm structure 9. Correspondingly, a further fixed diaphragm structure (not shown) can also be provided in the metal layer 13 on the underside of the glass wafer 12, which covers both sections 3, 17.
    The sections 3, 17 (or the fixed diaphragm structure 11, the further fixed diaphragm structure and the diaphragm structures 9, 18 below it) can also be used with the same
    Light-emitting diode 15 are illuminated.
    The transmitted light can be detected by two optical sensors / photodiodes (not shown) or by an optical sensor which is arranged under the sections 3, 17 and spatially resolves the two sections 3, 17. That a sensor with two pixels is sufficient, one / 43
    Pixel is arranged under the movable section 3 and a
    Pixels under the further movable section 17.
    FIG. 10 shows the micromechanical structure 1 of a fourth embodiment of the device according to the invention, which also allows the unambiguous measurement of the electric field E or the first field strength component Ex when vibrations are present. This takes advantage of the fact that vibrations typically have a purely translatory effect. The micromechanical structure 1 is now designed such that the change in the spatial arrangement of the movable section 3 relative to the frame section 2 caused by the first field strength component Ex causes a rotation of the movable section 3 relative to the frame section 2 - in the example shown, parallel to the third direction z Axis of rotation - is. By specifically determining the rotational arrangement change, the first field strength component E x can be inferred directly.
    For this purpose, the movable section 3 is in turn arranged in the U-shaped frame section 2, the movable section 3 having an essentially square outline with sides in the plane xy. The movable section is connected via three webs 5 both to the legs 4 and to a crossbar 19 of the frame section 2 connecting the legs 4. The webs 5 are each arranged centrally with respect to the sides of the movable section 3. A side 20 of the movable side not connected to the frame section 2
    Section 3 projects in the first direction x over the
    Frame section 2 addition. The side 20 runs parallel to the second direction y and, viewed in the second direction y, has a first half 20a and a subsequent second half 20b.
    Seen in the first direction x, the reinforcing element 6 is arranged behind the side 20, but in contrast to / 43 to the exemplary embodiment of FIG. 2, it is specially shaped. This shape is such that the reinforcing element 6 only comes close to the side 20 in the area of the second half 20b. That Gap 7 with the gap width 8 is only present in the area of the second half 20b. Correspondingly, a reinforced first force component Fx is generated by the reinforcing element 6 only in the region of the second half 20b, or this reinforced force component Fx only acts on the movable section 3 in the region of the second half 20b, but not in the region of the first half 20a. The result is a rotation of the movable section about an axis of rotation 21 which lies in the center of the movable section 3 with respect to the plane xy, which rotation is indicated in FIG. 10 by the curved arrow. The axis of rotation 21 is normal to the plane xy.
    In order to be able to specifically detect the rotational and not the translatory part of the deflection / change in arrangement of the movable section 3, the diaphragm structure 9 is adapted accordingly. Specifically, the diaphragm structure 9 in turn has a plurality of rectangular holes 10 which, however, are arranged in a star shape around the center of the movable section 3 with respect to the plane xy or around the axis of rotation 21. In other words, the rectangular holes 10 are arranged around the axis of rotation 21 and with their longer sides pointing radially outwards.
    The fixed aperture structure 11 is also adapted accordingly, cf. 11. The diaphragm structure 11 is in turn formed by the metal layer 13 and, however, now consists of rectangular holes 10 in the metal layer, which are of the same size and are oriented in the same way as the rectangular holes 10 of the diaphragm structure 9.
    The other structure with light-emitting diode 15 and photodiode 16 corresponds to that shown in FIG. 8. If light from / 43
    Light-emitting diode 15 is transmitted through the aperture structures 11 and 9, the intensity of the transmitted light and detected by the photodiode 16 depends much more on the rotational arrangement of the aperture structures
    11 and 9 from each other than from their translational
    Arrangement to each other. translational
    Deflections / changes in arrangement are thus negligible for these intensity measurements, and the measured change in intensity is essentially a measure of the rotational deflection / change in arrangement of the movable
    Section 3 relative to the frame section 2. Accordingly, even in the presence of vibrations, the electric field E or the first field strength component Ex can be concluded reliably and with high accuracy.
    / 43
    LIST OF REFERENCE NUMBERS
    Micromechanical structure
    frame section
    Movable section
    leg
    web
    reinforcing element
    gap
    gap width
    Aperture structure on the movable section
    Rectangular hole
    Fixed aperture structure
    Glass wafer
    metal layer
    metal strips
    led
    photodiode
    Another moving section
    Another aperture structure on the other movable
    section
    crossbeam
    Unconnected side of the movable section
    20a First half of page 20/43
    20b Second half of page 20
    Rotation axis x first direction y second direction z third direction xy plane, parallel to the first and second direction
    E Electric field
    Ex First field strength component of the electric field parallel to the first direction
    F force
    Fx First force component parallel to the first direction / 43
    权利要求:
    Claims (18)
    [1]
    EXPECTATIONS
    1. Device for measuring an electric field (E), the device comprising a micromechanical structure (1) which extends in a first direction (x), a second direction (y) and a third direction (z), the first Direction (x), the second direction (y) and the third direction (z) are mutually normal, the micromechanical structure (1) being made of an electrically conductive material at an operating temperature and a frame section (2) and a movable section (3), the movable section (3) being electrically conductively and mechanically elastically connected to the frame section (2) and being movable relative to the frame section (2), the micromechanical structure (1) being designed such that in an arrangement the micromechanical structure (1) in the electric field (E) with a first
    Field strength component (Ex) parallel to the first direction (x) not equal to zero is an electrical polarization of the micromechanical structure (1), which has a first force component (Fx) acting on the movable section (3) parallel to the first direction (x) and one of the first force component (Fx) dependent change in the spatial arrangement of the movable section (3) relative to the frame section (2), and wherein detection means (9, 11, 15, 16) are provided to change the spatial arrangement of the movable section (3) to be determined relative to the frame section (2).
    [2]
    2. Device according to claim 1, characterized in that the frame section (2) and the movable section (3) are integrally formed.
    33/43
    [3]
    3. Device according to one of claims 1 to 2, characterized in that the frame section (2) in a plane (xy) which is parallel to the first direction (x) and the second direction (y), at least in sections essentially one Forms U-shape, parallel legs (4) of the U-shape running parallel to the first direction (x), that the movable section (3) is arranged between the legs (4) and that the movable section (3) via webs ( 5), which preferably run parallel to the second direction (y), is connected to the legs (4).
    [4]
    4. Device according to one of claims 1 to 3, characterized in that the micromechanical structure (1) comprises a reinforcing element (6) which is electrically separate from the frame section (2) and from the movable section (3) and which in the first direction (x) seen behind the movable section (3), a gap (7) being arranged between the movable section (3) and the reinforcing element (6).
    [5]
    5. The device according to claim 4, characterized in that the gap (7) a gap width (8) measured in the first direction (x) is less than or equal to 500 gm, preferably less than or equal to 200 gm, particularly preferably from 0.1 gm to 50 gm , having.
    [6]
    6. Device according to one of claims 1 to 5, characterized in that the detection means comprise an optical sensor (16) and at least one light supply means (15).
    [7]
    7. The device according to claim 6, characterized in that the movable section (3) between the at least one light supply means (15) and the optical sensor (16) is arranged.
    34/43
    [8]
    8. The device according to claim 7, characterized in that the at least one light supply means comprises a light guide in order to illuminate one side of the micromechanical structure (1) at least in sections with light guided through the light guide, and in that the optical sensor comprises a further light guide to collect the light on an opposite side of the micromechanical structure (1).
    [9]
    9. Device according to one of claims 1 to 8, characterized in that the detection means comprise a panel structure (9) on the movable section (3) and a fixed panel structure (11), the fixed panel structure (11) relative to the frame section (2 ) has a fixed spatial arrangement.
    [10]
    10. The device according to claim 9, characterized in that the fixed aperture structure (11) is formed in a metal layer (13) on a glass wafer (12).
    [11]
    11. Device according to one of claims 9 to 10 and according to claim 7, characterized in that the fixed panel structure (11) between the movable section (3), in particular the panel structure (9) on the movable
    Section (3), and the at least one light supply means (15) or the optical sensor (16) is arranged.
    [12]
    12. Device according to one of claims 1 to 10, characterized in that the micromechanical structure (1) is designed such that the change in spatial
    Arrangement of the movable section (3) relative to the frame section (2) comprises a rotation of the movable section (3) relative to the frame section (2), preferably about an axis of rotation parallel to the third direction (z).
    35/43
    [13]
    13. Device according to one of claims 1 to 12, characterized in that the micromechanical structure (1) comprises a further movable section (17) which is electrically conductively and mechanically elastically connected to the frame section (2), the strength of the mechanical Coupling the further movable section (17) to the frame section (2) in a certain known ratio, preferably in a ratio of 1: 1, to the strength of the mechanical coupling of the movable section (3) to the frame section (2), and wherein the micromechanical Structure (1) is designed such that when the micromechanical structure (1) is arranged in the electric field (E) with the first field strength component (Ex) not equal to zero, the electrical polarization of the micromechanical structure (1) takes place, which is movable towards the other Section (17) further first force component acting parallel to the first direction (x) and one of the further first force component ente dependent change in the spatial arrangement of the further movable section (17) relative to the frame section (2), the further first force component and / or the change in the spatial arrangement of the further movable section (17) by a factor less than or equal to 0, 1, preferably less than or equal to 0.01, is less than the first force component and / or the change in the spatial arrangement of the movable section (3) caused by the first force component, and that further detection means (18) are provided to detect the change in the spatial To determine the arrangement of the further movable section (17) relative to the frame section (2).
    [14]
    14. The apparatus according to claim 13, characterized in that the further detection means another
    36/43
    Include panel structure (18) on the further movable section (17) and a further fixed panel structure, the further fixed panel structure (11) having a spatial arrangement that is fixed relative to the frame section (2).
    [15]
    15. Device according to one of claims 13 to 14, characterized in that the further detection means comprise a further optical sensor and at least one further light supply means.
    [16]
    16. The apparatus according to claim 15 and according to claim 7, characterized in that the further optical sensor by the optical sensor (16) and the at least one further light supply means are formed by the at least one light supply means (15), the further movable section (17th ) is arranged between the at least one light supply means (15) and the optical sensor (16).
    [17]
    17. The device according to one of claims 14 to 16 and according to claim 14 and according to claim 10, characterized in that the further fixed aperture structure is formed in the metal layer (13) on the glass wafer (12).
    [18]
    18. Vehicle, preferably aircraft, particularly preferably unmanned aircraft comprising a device according to one of claims 1 to 17.
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    同族专利:
    公开号 | 公开日
    US11231450B2|2022-01-25|
    ES2883711T3|2021-12-09|
    EP3729113A1|2020-10-28|
    AT520811B1|2021-06-15|
    CN111656202A|2020-09-11|
    US20200355735A1|2020-11-12|
    EP3729113B1|2021-06-09|
    WO2019120795A1|2019-06-27|
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    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    ATA51052/2017A|AT520811B1|2017-12-20|2017-12-20|DEVICE FOR MEASURING AN ELECTRICAL FIELD|ATA51052/2017A| AT520811B1|2017-12-20|2017-12-20|DEVICE FOR MEASURING AN ELECTRICAL FIELD|
    EP18803979.6A| EP3729113B1|2017-12-20|2018-11-16|Device for measuring an electric field|
    PCT/EP2018/081516| WO2019120795A1|2017-12-20|2018-11-16|Device for measuring an electric field|
    CN201880088088.3A| CN111656202A|2017-12-20|2018-11-16|Device for measuring an electric field|
    ES18803979T| ES2883711T3|2017-12-20|2018-11-16|Device for measuring an electric field|
    US16/956,111| US11231450B2|2017-12-20|2018-11-16|Device for measuring an electric field|
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